| Part Numbers | Manufacturer Name | Datasheet | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) @ Vgs | Input Capacitance (Ciss) @ Vds | Power - Max | Mounting Type | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| DMHC3025LSD-13 | DIODES INC | 2 N and 2 P-Channel (H-Bridge) | 30V | 6A, 4.2A | 25 mOhm @ 5A, 10V | 2V @ 250µA | 11.7nC @ 10V | 590pF @ 15V | 1.5W | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | |
| IRF7604TR | INTERNATIONAL RECTIFIER CORP | MOSFET P-Channel, Metal Oxide | 20V | 3.6A (Ta) | 90 mOhm @ 2.4A, 4.5V | 700mV @ 250µA | 20nC @ 4.5V | 590pF @ 15V | 1.8W | Surface Mount | 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) | |
| IRF7604TRPBF | INTERNATIONAL RECTIFIER CORP | MOSFET P-Channel, Metal Oxide | 20V | 3.6A (Ta) | 90 mOhm @ 2.4A, 4.5V | 700mV @ 250µA | 20nC @ 4.5V | 590pF @ 15V | 1.8W | Surface Mount | 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) | |
| SI2343CDS-T1-GE3 | VISHAY SILICONIX | MOSFET P-Channel, Metal Oxide | 30V | 5.9A (Tc) | 45 mOhm @ 4.2A, 10V | 2.5V @ 250µA | 21nC @ 10V | 590pF @ 15V | 2.5W | Surface Mount | TO-236-3, SC-59, SOT-23-3 | |
| SI4485DY-T1-GE3 | VISHAY SILICONIX | MOSFET P-Channel, Metal Oxide | 30V | 5.9A (Ta), 6A (Tc) | 42 mOhm @ 5.9A, 10V | 2.5V @ 250µA | 21nC @ 10V | 590pF @ 15V | 5W | Surface Mount | 8-SOIC (0.154", 3.90mm Width) |
© 2016 Copyright
