Specification
FET Type MOSFET P-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 3.6A (Ta)
Rds On (Max) @ Id, Vgs 90 mOhm @ 2.4A, 4.5V
Vgs(th) (Max) @ Id 700mV @ 250µA
Gate Charge (Qg) @ Vgs 20nC @ 4.5V
Input Capacitance (Ciss) @ Vds 590pF @ 15V
Power - Max 1.8W
Mounting Type Surface Mount
Package / Case 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)