3100pF @ 50V,Input Capacitance (Ciss) @ Vds
7 parts found
Part Numbers Manufacturer Name Datasheet FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) @ Vgs Input Capacitance (Ciss) @ Vds Power - Max Mounting Type Package / Case
STF17N62K3 STMICROELECTRONICS
MOSFET N-Channel, Metal Oxide 620V 15.5A (Tc) 340 mOhm @ 7.5A, 10V 4.5V @ 100µA 105nC @ 10V 3100pF @ 50V 40W Through Hole TO-220-3 Full Pack
STD80N10F7 STMICROELECTRONICS
MOSFET N-Channel, Metal Oxide 100V 70A (Tc) 10 mOhm @ 40A, 10V 4.5V @ 250µA 45nC @ 10V 3100pF @ 50V 85W - -
STF80N10F7 STMICROELECTRONICS
MOSFET N-Channel, Metal Oxide 100V 40A (Tc) 10 mOhm @ 40A, 10V 4.5V @ 250µA 45nC @ 10V 3100pF @ 50V 30W - -
STP80N10F7 STMICROELECTRONICS
MOSFET N-Channel, Metal Oxide 100V 80A (Tc) 10 mOhm @ 40A, 10V 4.5V @ 250µA 45nC @ 10V 3100pF @ 50V 110W - -
AON6450 ALPHA & OMEGA SEMICONDUCTOR LTD
MOSFET N-Channel, Metal Oxide 100V 9A (Ta), 52A (Tc) 14.5 mOhm @ 20A, 10V 4V @ 250µA 52nC @ 10V 3100pF @ 50V 2.3W Surface Mount 8-PowerVDFN
SIE854DF-T1-GE3 VISHAY SILICONIX
MOSFET N-Channel, Metal Oxide 100V 60A (Tc) 14.2 mOhm @ 13.2A, 10V 4.4V @ 250µA 75nC @ 10V 3100pF @ 50V 125W Surface Mount 10-PolarPAK® (L)
SIE854DF-T1-E3 VISHAY SILICONIX
MOSFET N-Channel, Metal Oxide 100V 60A (Tc) 14.2 mOhm @ 13.2A, 10V 4.4V @ 250µA 75nC @ 10V 3100pF @ 50V 125W Surface Mount 10-PolarPAK® (L)