Specification
FET Type MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) @ 25°C 9A (Ta), 52A (Tc)
Rds On (Max) @ Id, Vgs 14.5 mOhm @ 20A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) @ Vgs 52nC @ 10V
Input Capacitance (Ciss) @ Vds 3100pF @ 50V
Power - Max 2.3W
Mounting Type Surface Mount
Package / Case 8-PowerVDFN