90nC @ 10V,Gate Charge (Qg) @ Vgs
300W,Power - Max
14 parts found
Part Numbers Manufacturer Name Datasheet FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) @ Vgs Input Capacitance (Ciss) @ Vds Power - Max Mounting Type Package / Case
FQA19N60 FAIRCHILD SEMICONDUCTOR CORP
MOSFET N-Channel, Metal Oxide 600V 18.5A 380 mOhm @ 9.3A, 10V 5V @ 250µA 90nC @ 10V 3600pF @ 25V 300W Through Hole TO-3P-3, SC-65-3
IXFH15N80Q IXYS CORP
MOSFET N-Channel, Metal Oxide 800V 15A (Tc) 600 mOhm @ 7.5A, 10V 4.5V @ 4mA 90nC @ 10V 4300pF @ 25V 300W Through Hole TO-247-3
IXFH20N60Q IXYS CORP
MOSFET N-Channel, Metal Oxide 600V 20A (Tc) 350 mOhm @ 10A, 10V 4.5V @ 4mA 90nC @ 10V 3300pF @ 25V 300W Through Hole TO-247-3
IXFT20N60Q IXYS CORP
MOSFET N-Channel, Metal Oxide 600V 20A (Tc) 350 mOhm @ 10A, 10V 4.5V @ 4mA 90nC @ 10V 3300pF @ 25V 300W Surface Mount TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
IXFT15N80Q IXYS CORP
MOSFET N-Channel, Metal Oxide 800V 15A (Tc) 600 mOhm @ 7.5A, 10V 4.5V @ 4mA 90nC @ 10V 4300pF @ 25V 300W Surface Mount TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
IXFH12N100Q IXYS CORP
MOSFET N-Channel, Metal Oxide 1000V (1kV) 12A (Tc) 1.05 Ohm @ 6A, 10V 5.5V @ 4mA 90nC @ 10V 2900pF @ 25V 300W Through Hole TO-247-3
IXFT12N90Q IXYS CORP
MOSFET N-Channel, Metal Oxide 900V 12A (Tc) 900 mOhm @ 6A, 10V 5.5V @ 4mA 90nC @ 10V 2900pF @ 25V 300W Surface Mount TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
IXFX12N90Q IXYS CORP
MOSFET N-Channel, Metal Oxide 900V 12A (Tc) 900 mOhm @ 6A, 10V 5.5V @ 4mA 90nC @ 10V 2900pF @ 25V 300W Through Hole TO-247-3
IXFT12N100Q IXYS CORP
MOSFET N-Channel, Metal Oxide 1000V (1kV) 12A (Tc) 1.05 Ohm @ 6A, 10V 5.5V @ 4mA 90nC @ 10V 2900pF @ 25V 300W Through Hole TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
PSMN015-100P,127 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 100V 75A 15 mOhm @ 25A, 10V 4V @ 1mA 90nC @ 10V 4900pF @ 25V 300W Through Hole TO-220-3