MOSFET, N, TO-3P; Transistor Polarity:N Channel; Continuous Drain Current Id:18.5A; Drain Source Voltage Vds:600V; On Resistance Rds(on):380mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:5V; Power Dissipation Pd:300W; Transistor Case Style:TO-3P; No. of Pins:3; Operating Temperature Max:1
Specification
FET Type MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 600V
Current - Continuous Drain (Id) @ 25°C 18.5A
Rds On (Max) @ Id, Vgs 380 mOhm @ 9.3A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA
Gate Charge (Qg) @ Vgs 90nC @ 10V
Input Capacitance (Ciss) @ Vds 3600pF @ 25V
Power - Max 300W
Mounting Type Through Hole
Package / Case TO-3P-3, SC-65-3
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INR 2348.5
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Price : 2348.5