| Part Numbers | Manufacturer Name | Datasheet | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) @ Vgs | Input Capacitance (Ciss) @ Vds | Power - Max | Mounting Type | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| FDB8445 | FAIRCHILD SEMICONDUCTOR CORP | MOSFET N-Channel, Metal Oxide | 40V | 70A (Tc) | 9 mOhm @ 70A, 10V | 4V @ 250µA | 62nC @ 10V | 3805pF @ 25V | 92W | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | |
| FDB8445_F085 | FAIRCHILD SEMICONDUCTOR CORP | MOSFET N-Channel, Metal Oxide | 40V | 70A (Tc) | 9 mOhm @ 70A, 10V | 4V @ 250µA | 62nC @ 10V | 3805pF @ 25V | 92W | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | |
| HAT2170H-EL-E | RENESAS ELECTRONICS CORP | MOSFET N-Channel, Metal Oxide | 40V | 45A (Ta) | 4.2 mOhm @ 22.5A, 10V | 3V @ 1mA | 62nC @ 10V | 4650pF @ 10V | 30W | Surface Mount | SC-100, SOT-669 | |
| HAT2170H | RENESAS ELECTRONICS CORP | MOSFET N-Channel, Metal Oxide | 40V | 45A (Ta) | 4.2 mOhm @ 22.5A, 10V | - | 62nC @ 10V | 4650pF @ 10V | 30W | Surface Mount | SC-100, SOT-669 | |
| CSD18502KCS | TEXAS INSTRUMENTS INC | MOSFET N-Channel, Metal Oxide | 40V | 100A (Tc) | 2.9 mOhm @ 100A, 10V | 2.1V @ 250µA | 62nC @ 10V | 4680pF @ 20V | 216W | Through Hole | TO-220-3 | |
| SQ4840EY-T1-GE3 | VISHAY SILICONIX | MOSFET N-Channel, Metal Oxide | 40V | 20.7A (Tc) | 9 mOhm @ 14A, 10V | 2.5V @ 250µA | 62nC @ 10V | 2440pF @ 20V | 7.1W | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | |
| SI7611DN-T1-GE3 | VISHAY SILICONIX | MOSFET P-Channel, Metal Oxide | 40V | 18A (Tc) | 25 mOhm @ 9.3A, 10V | 3V @ 250µA | 62nC @ 10V | 1980pF @ 20V | 39W | Surface Mount | PowerPAK® 1212-8 |
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