Specification
FET Type MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 40V
Current - Continuous Drain (Id) @ 25°C 100A (Tc)
Rds On (Max) @ Id, Vgs 2.9 mOhm @ 100A, 10V
Vgs(th) (Max) @ Id 2.1V @ 250µA
Gate Charge (Qg) @ Vgs 62nC @ 10V
Input Capacitance (Ciss) @ Vds 4680pF @ 20V
Power - Max 216W
Mounting Type Through Hole
Package / Case TO-220-3