| Part Numbers | Manufacturer Name | Datasheet | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) @ Vgs | Input Capacitance (Ciss) @ Vds | Power - Max | Mounting Type | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| FQT4N20LTF | FAIRCHILD SEMICONDUCTOR CORP | MOSFET N-Channel, Metal Oxide | 200V | 850mA | 1.35 Ohm @ 425mA, 10V | 2V @ 250µA | 5.2nC @ 5V | 310pF @ 25V | 2.2W | Surface Mount | TO-261-4, TO-261AA | |
| FQP4N20L | FAIRCHILD SEMICONDUCTOR CORP | MOSFET N-Channel, Metal Oxide | 200V | 3.8A (Tc) | 1.35 Ohm @ 1.9A, 10V | 2V @ 250µA | 5.2nC @ 5V | 310pF @ 25V | 45W | Through Hole | TO-220-3 | |
| FDMA3028N | FAIRCHILD SEMICONDUCTOR CORP | 2 N-Channel (Dual) | 30V | 3.8A | 68 mOhm @ 3.8A, 4.5V | 1.5V @ 250µA | 5.2nC @ 5V | 375pF @ 15V | 700mW | Surface Mount | 6-WDFN Exposed Pad | |
| RRH040P03TB1 | ROHM CO LTD | MOSFET P-Channel, Metal Oxide | 30V | 4A (Ta) | 75 mOhm @ 4A, 10V | 2.5V @ 1mA | 5.2nC @ 5V | 480pF @ 10V | 2W | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | |
| FQPF4N20L | FAIRCHILD SEMICONDUCTOR CORP | MOSFET N-Channel, Metal Oxide | 200V | 3A (Tc) | 1.35 Ohm @ 1.5A, 10V | 2V @ 250µA | 5.2nC @ 5V | 310pF @ 25V | 27W | Through Hole | TO-220-3 Full Pack | |
| FQD4N20LTM | FAIRCHILD SEMICONDUCTOR CORP | MOSFET N-Channel, Metal Oxide | 200V | 3.2A (Tc) | 1.35 Ohm @ 1.6A, 10V | 2V @ 250µA | 5.2nC @ 5V | 310pF @ 25V | 2.5W | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | |
| FQD4N20LTF | FAIRCHILD SEMICONDUCTOR CORP | MOSFET N-Channel, Metal Oxide | 200V | 3.2A (Tc) | 1.35 Ohm @ 1.6A, 10V | 2V @ 250µA | 5.2nC @ 5V | 310pF @ 25V | 2.5W | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | |
| FQI4N20LTU | FAIRCHILD SEMICONDUCTOR CORP | MOSFET N-Channel, Metal Oxide | 200V | 3.8A (Tc) | 1.35 Ohm @ 1.9A, 10V | 2V @ 250µA | 5.2nC @ 5V | 310pF @ 25V | 3.13W | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | |
| FQB4N20LTM | FAIRCHILD SEMICONDUCTOR CORP | MOSFET N-Channel, Metal Oxide | 200V | 3.8A (Tc) | 1.35 Ohm @ 1.9A, 10V | 2V @ 250µA | 5.2nC @ 5V | 310pF @ 25V | 3.13W | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | |
| PHB11N06LT,118 | NXP SEMICONDUCTORS | MOSFET N-Channel, Metal Oxide | 55V | 10.3A (Tc) | 130 mOhm @ 5.5A, 10V | 2V @ 1mA | 5.2nC @ 5V | 330pF @ 25V | 33W | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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