FET Type | MOSFET P-Channel, Metal Oxide |
Drain to Source Voltage (Vdss) | 30V |
Current - Continuous Drain (Id) @ 25°C | 4A (Ta) |
Rds On (Max) @ Id, Vgs | 75 mOhm @ 4A, 10V |
Vgs(th) (Max) @ Id | 2.5V @ 1mA |
Gate Charge (Qg) @ Vgs | 5.2nC @ 5V |
Input Capacitance (Ciss) @ Vds | 480pF @ 10V |
Power - Max | 2W |
Mounting Type | Surface Mount |
Package / Case | 8-SOIC (0.154", 3.90mm Width) |