Specification
FET Type MOSFET P-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 4A (Ta)
Rds On (Max) @ Id, Vgs 75 mOhm @ 4A, 10V
Vgs(th) (Max) @ Id 2.5V @ 1mA
Gate Charge (Qg) @ Vgs 5.2nC @ 5V
Input Capacitance (Ciss) @ Vds 480pF @ 10V
Power - Max 2W
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154", 3.90mm Width)
Buying Option 1
1
-
INR 506.3
Please check the minimum quantity and order multiple
Order Multiple:1
Price : 506.3