46.2nC @ 10V,Gate Charge (Qg) @ Vgs
46.2nC @ 10V,Gate Charge (Qg) @ Vgs
6 parts found
Part Numbers Manufacturer Name Datasheet FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) @ Vgs Input Capacitance (Ciss) @ Vds Power - Max Mounting Type Package / Case
SPP73N03S2L-08 INFINEON TECHNOLOGIES AG
MOSFET N-Channel, Metal Oxide 30V 73A (Tc) 8.4 mOhm @ 36A, 10V 2V @ 55µA 46.2nC @ 10V 1710pF @ 25V 107W Through Hole TO-220-3
SPB73N03S2L-08 INFINEON TECHNOLOGIES AG
MOSFET N-Channel, Metal Oxide 30V 73A (Tc) 8.1 mOhm @ 36A, 10V 2V @ 55µA 46.2nC @ 10V 1710pF @ 25V 107W Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
SPB73N03S2L08T INFINEON TECHNOLOGIES AG
MOSFET N-Channel, Metal Oxide 30V 73A (Tc) 8.1 mOhm @ 36A, 10V 2V @ 55µA 46.2nC @ 10V 1710pF @ 25V 107W Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
SPB73N03S2L-08 G INFINEON TECHNOLOGIES AG
MOSFET N-Channel, Metal Oxide 30V 73A (Tc) 8.1 mOhm @ 36A, 10V 2V @ 55µA 46.2nC @ 10V 1710pF @ 25V 107W Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
SPI73N03S2L-08 INFINEON TECHNOLOGIES AG
MOSFET N-Channel, Metal Oxide 30V 73A (Tc) 8.4 mOhm @ 36A, 10V 2V @ 55µA 46.2nC @ 10V 1710pF @ 25V 107W Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA
PSMN016-100XS,127 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 100V 32.1A (Ta) 16 mOhm @ 10A, 10V 4V @ 1mA 46.2nC @ 10V 2404pF @ 50V 46.1W Through Hole TO-220-3 Isolated Tab