Specification
FET Type MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 73A (Tc)
Rds On (Max) @ Id, Vgs 8.4 mOhm @ 36A, 10V
Vgs(th) (Max) @ Id 2V @ 55µA
Gate Charge (Qg) @ Vgs 46.2nC @ 10V
Input Capacitance (Ciss) @ Vds 1710pF @ 25V
Power - Max 107W
Mounting Type Through Hole
Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA