21nC @ 10V,Gate Charge (Qg) @ Vgs
-,Package / Case
4 parts found
Part Numbers Manufacturer Name Datasheet FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) @ Vgs Input Capacitance (Ciss) @ Vds Power - Max Mounting Type Package / Case
AUIRF7647S2TR INTERNATIONAL RECTIFIER CORP
MOSFET N-Channel, Metal Oxide 100V 5.9A (Ta), 24A (Tc) 31 mOhm @ 14A, 10V 5V @ 50µA 21nC @ 10V 910pF @ 25V 2.5W Surface Mount -
PSMN8R0-40BS,118 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 40V 77A (Tmb) 7.6 mOhm @ 25A, 10V 4V @ 1mA 21nC @ 10V 1262pF @ 12V 86W - -
SIZ702DT-T1-GE3 VISHAY SILICONIX
2 N-Channel (Dual) Asymmetrical 30V 13.8A, 14A 12 mOhm @ 13.8A, 10V 2.5V @ 250µA 21nC @ 10V 790pF @ 15V 3.9W, 4.5W Surface Mount -
SIZ918DT-T1-GE3 VISHAY SILICONIX
2 N-Channel (Dual) 30V 14.3A, 26A 12 mOhm @ 13.8A, 10V 2.2V @ 250µA 21nC @ 10V 790pF @ 15V 4.2W, 5.2W Surface Mount -