| Part Numbers | Manufacturer Name | Datasheet | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) @ Vgs | Input Capacitance (Ciss) @ Vds | Power - Max | Mounting Type | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| NTMS4816NR2G | ON SEMICONDUCTOR | MOSFET N-Channel, Metal Oxide | 30V | 6.8A (Ta) | 10 mOhm @ 9A, 10V | 3V @ 250µA | 18.3nC @ 10V | 1060pF @ 25V | 780mW | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | |
| SPD11N10 | INFINEON TECHNOLOGIES AG | MOSFET N-Channel, Metal Oxide | 100V | 10.5A (Tc) | 170 mOhm @ 7.8A, 10V | 4V @ 21µA | 18.3nC @ 10V | 400pF @ 25V | 50W | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | |
| SPU11N10 | INFINEON TECHNOLOGIES AG | MOSFET N-Channel, Metal Oxide | 100V | 10.5A (Tc) | 170 mOhm @ 7.8A, 10V | 4V @ 21µA | 18.3nC @ 10V | 400pF @ 25V | 50W | Through Hole | TO-251-3 Long Leads, IPak, TO-251AB | |
| IRFL024NPBF | INTERNATIONAL RECTIFIER CORP | MOSFET N-Channel, Metal Oxide | 55V | 2.8A (Ta) | 75 mOhm @ 2.8A, 10V | 4V @ 250µA | 18.3nC @ 10V | 400pF @ 25V | 1W | Surface Mount | TO-261-4, TO-261AA | |
| IRFL024N | INTERNATIONAL RECTIFIER CORP | MOSFET N-Channel, Metal Oxide | 55V | 2.8A (Ta) | 75 mOhm @ 2.8A, 10V | 4V @ 250µA | 18.3nC @ 10V | 400pF @ 25V | 1W | Surface Mount | TO-261-4, TO-261AA | |
| IRFL024NTR | INTERNATIONAL RECTIFIER CORP | MOSFET N-Channel, Metal Oxide | 55V | 2.8A (Ta) | 75 mOhm @ 2.8A, 10V | 4V @ 250µA | 18.3nC @ 10V | 400pF @ 25V | 1W | Surface Mount | TO-261-4, TO-261AA | |
| IRFL024NTRPBF | INTERNATIONAL RECTIFIER CORP | MOSFET N-Channel, Metal Oxide | 55V | 2.8A (Ta) | 75 mOhm @ 2.8A, 10V | 4V @ 250µA | 18.3nC @ 10V | 400pF @ 25V | 1W | Surface Mount | TO-261-4, TO-261AA | |
| PSMN8R0-30YL,115 | NXP SEMICONDUCTORS | MOSFET N-Channel, Metal Oxide | 30V | 62A (Tmb) | 8.3 mOhm @ 15A, 10V | 2.15V @ 1mA | 18.3nC @ 10V | 1005pF @ 15V | 56W | Surface Mount | SC-100, SOT-669, 4-LFPAK |
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