Transistor: N-MOSFET; unipolar; HEXFET; 55V; 4A; 2
Specification
FET Type MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 55V
Current - Continuous Drain (Id) @ 25°C 2.8A (Ta)
Rds On (Max) @ Id, Vgs 75 mOhm @ 2.8A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) @ Vgs 18.3nC @ 10V
Input Capacitance (Ciss) @ Vds 400pF @ 25V
Power - Max 1W
Mounting Type Surface Mount
Package / Case TO-261-4, TO-261AA