40V,Drain to Source Voltage (Vdss)
130nC @ 10V,Gate Charge (Qg) @ Vgs
6 parts found
Part Numbers Manufacturer Name Datasheet FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) @ Vgs Input Capacitance (Ciss) @ Vds Power - Max Mounting Type Package / Case
IRFR7446PBF INTERNATIONAL RECTIFIER CORP
MOSFET N-Channel, Metal Oxide 40V 56A (Tc) 3.9 mOhm @ 56A, 10V 3.9V @ 100µA 130nC @ 10V 3150pF @ 25V 98W Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63
IRFR7446TRPBF INTERNATIONAL RECTIFIER CORP
MOSFET N-Channel, Metal Oxide 40V 56A (Tc) 3.9 mOhm @ 56A, 10V 3.9V @ 100µA 130nC @ 10V 3150pF @ 25V 98W Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63
PSMN2R2-40PS,127 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 40V 100A (Tc) 2.1 mOhm @ 25A, 10V 4V @ 1mA 130nC @ 10V 8423pF @ 20V 306W Through Hole TO-220-3
PSMN2R2-40BS,118 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 40V 100A (Tmb) 2.2 mOhm @ 25A, 10V 4V @ 1mA 130nC @ 10V 8423pF @ 20V 306W Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
SUP65P04-15-E3 VISHAY SILICONIX
MOSFET P-Channel, Metal Oxide 40V 65A (Tc) 15 mOhm @ 30A, 10V 3V @ 250µA 130nC @ 10V 5400pF @ 25V 3.75W Through Hole TO-220-3
SUD50P04-15-E3 VISHAY SILICONIX
MOSFET P-Channel, Metal Oxide 40V 50A (Tc) 15 mOhm @ 30A, 10V 1V @ 250µA 130nC @ 10V 5400pF @ 25V 3W Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63