Specification
FET Type MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 40V
Current - Continuous Drain (Id) @ 25°C 56A (Tc)
Rds On (Max) @ Id, Vgs 3.9 mOhm @ 56A, 10V
Vgs(th) (Max) @ Id 3.9V @ 100µA
Gate Charge (Qg) @ Vgs 130nC @ 10V
Input Capacitance (Ciss) @ Vds 3150pF @ 25V
Power - Max 98W
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63