20V,Drain to Source Voltage (Vdss)
110nC @ 4.5V,Gate Charge (Qg) @ Vgs
10 parts found
Part Numbers Manufacturer Name Datasheet FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) @ Vgs Input Capacitance (Ciss) @ Vds Power - Max Mounting Type Package / Case
IRL3502S INTERNATIONAL RECTIFIER CORP
MOSFET N-Channel, Metal Oxide 20V 110A (Tc) 7 mOhm @ 64A, 7V 700mV @ 250µA 110nC @ 4.5V 4700pF @ 15V 140W Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IRL3502 INTERNATIONAL RECTIFIER CORP
MOSFET N-Channel, Metal Oxide 20V 110A (Tc) 7 mOhm @ 64A, 7V 700mV @ 250µA 110nC @ 4.5V 4700pF @ 15V 140W Through Hole TO-220-3
IRL3502STRR INTERNATIONAL RECTIFIER CORP
MOSFET N-Channel, Metal Oxide 20V 110A (Tc) 7 mOhm @ 64A, 7V 700mV @ 250µA 110nC @ 4.5V 4700pF @ 15V 140W Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IRL3502PBF INTERNATIONAL RECTIFIER CORP
MOSFET N-Channel, Metal Oxide 20V 110A (Tc) 7 mOhm @ 64A, 7V 700mV @ 250µA 110nC @ 4.5V 4700pF @ 15V 140W Through Hole TO-220-3
IRL3502SPBF INTERNATIONAL RECTIFIER CORP
MOSFET N-Channel, Metal Oxide 20V 110A (Tc) 7 mOhm @ 64A, 7V 700mV @ 250µA 110nC @ 4.5V 4700pF @ 15V 140W Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IRL3502STRRPBF INTERNATIONAL RECTIFIER CORP
MOSFET N-Channel, Metal Oxide 20V 110A (Tc) 7 mOhm @ 64A, 7V 700mV @ 250µA 110nC @ 4.5V 4700pF @ 15V 140W Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IRL3502STRLPBF INTERNATIONAL RECTIFIER CORP
MOSFET N-Channel, Metal Oxide 20V 110A (Tc) 7 mOhm @ 64A, 7V 700mV @ 250µA 110nC @ 4.5V 4700pF @ 15V 140W Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IRL3502L VISHAY SILICONIX
MOSFET N-Channel, Metal Oxide 20V 110A (Tc) 7 mOhm @ 64A, 7V 700mV @ 250µA 110nC @ 4.5V 4700pF @ 15V 140W Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA
SI4493DY-T1-E3 VISHAY SILICONIX
MOSFET P-Channel, Metal Oxide 20V 10A (Ta) 7.75 mOhm @ 14A, 4.5V 1.4V @ 250µA 110nC @ 4.5V - 1.5W Surface Mount 8-SOIC (0.154", 3.90mm Width)
SI4493DY-T1-GE3 VISHAY SILICONIX
MOSFET P-Channel, Metal Oxide 20V 10A (Ta) 7.75 mOhm @ 14A, 4.5V 1.4V @ 250µA 110nC @ 4.5V - 1.5W Surface Mount 8-SOIC (0.154", 3.90mm Width)