Transistor: N-MOSFET; unipolar; HEXFET; 20V; 110A;
Specification
FET Type MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 110A (Tc)
Rds On (Max) @ Id, Vgs 7 mOhm @ 64A, 7V
Vgs(th) (Max) @ Id 700mV @ 250µA
Gate Charge (Qg) @ Vgs 110nC @ 4.5V
Input Capacitance (Ciss) @ Vds 4700pF @ 15V
Power - Max 140W
Mounting Type Surface Mount
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB