10.5nC @ 5V,Gate Charge (Qg) @ Vgs
12 parts found
Part Numbers Manufacturer Name Datasheet FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) @ Vgs Input Capacitance (Ciss) @ Vds Power - Max Mounting Type Package / Case
DMN3033LSN-7 DIODES INC
MOSFET N-Channel, Metal Oxide 30V 6A (Ta) 30 mOhm @ 6A, 10V 2.1V @ 250µA 10.5nC @ 5V 755pF @ 10V 1.4W Surface Mount TO-236-3, SC-59, SOT-23-3
RRR040P03TL ROHM CO LTD
MOSFET P-Channel, Metal Oxide 30V 4A (Ta) 45 mOhm @ 4A, 10V 2.5V @ 1mA 10.5nC @ 5V 1000pF @ 10V 1W Surface Mount TO-236-3, SC-59, SOT-23-3
EPC2015 EPCOS AG
GaNFET N-Channel, Gallium Nitride 40V 33A (Ta) 4 mOhm @ 33A, 5V 2.5V @ 9mA 10.5nC @ 5V 1100pF @ 20V - Surface Mount Die Outline (11-Solder Bar)
EPC1001 EPCOS AG
GaNFET N-Channel, Gallium Nitride 100V 25A (Ta) 7 mOhm @ 25A, 5V 2.5V @ 5mA 10.5nC @ 5V 800pF @ 50V - Surface Mount Die
IRF7901D1 INTERNATIONAL RECTIFIER CORP
2 N-Channel (Dual) 30V 6.2A 38 mOhm @ 5A, 4.5V 1V @ 250µA 10.5nC @ 5V 780pF @ 16V 2W Surface Mount 8-SOIC (0.154", 3.90mm Width)
IRF7901D1TR INTERNATIONAL RECTIFIER CORP
2 N-Channel (Dual) 30V 6.2A 38 mOhm @ 5A, 4.5V 1V @ 250µA 10.5nC @ 5V 780pF @ 16V 2W Surface Mount 8-SOIC (0.154", 3.90mm Width)
IRF7901D1TRPBF INTERNATIONAL RECTIFIER CORP
2 N-Channel (Dual) 30V 6.2A 38 mOhm @ 5A, 4.5V 1V @ 250µA 10.5nC @ 5V 780pF @ 16V 2W Surface Mount 8-SOIC (0.154", 3.90mm Width)
BUK9Y22-30B,115 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 30V 37.7A (Tc) 19 mOhm @ 20A, 10V 2V @ 1mA 10.5nC @ 5V 940pF @ 25V 59.4W Surface Mount SC-100, SOT-669, 4-LFPAK
SI7888DP-T1-E3 VISHAY SILICONIX
MOSFET N-Channel, Metal Oxide 30V 9.4A (Ta) 12 mOhm @ 12.4A, 10V 2V @ 250µA 10.5nC @ 5V - 1.8W Surface Mount PowerPAK® SO-8
SI7888DP-T1-GE3 VISHAY SILICONIX
MOSFET N-Channel, Metal Oxide 30V 9.4A (Ta) 12 mOhm @ 12.4A, 10V 2V @ 250µA 10.5nC @ 5V - 1.8W Surface Mount PowerPAK® SO-8