FET Type | GaNFET N-Channel, Gallium Nitride |
Drain to Source Voltage (Vdss) | 40V |
Current - Continuous Drain (Id) @ 25°C | 33A (Ta) |
Rds On (Max) @ Id, Vgs | 4 mOhm @ 33A, 5V |
Vgs(th) (Max) @ Id | 2.5V @ 9mA |
Gate Charge (Qg) @ Vgs | 10.5nC @ 5V |
Input Capacitance (Ciss) @ Vds | 1100pF @ 20V |
Power - Max | - |
Mounting Type | Surface Mount |
Package / Case | Die Outline (11-Solder Bar) |