| Part Numbers | Manufacturer Name | Datasheet | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) @ Vgs | Input Capacitance (Ciss) @ Vds | Power - Max | Mounting Type | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| FDD4141 | FAIRCHILD SEMICONDUCTOR CORP | MOSFET P-Channel, Metal Oxide | 40V | 10.8A (Ta), 50A (Tc) | 12.3 mOhm @ 12.7A, 10V | 3V @ 250µA | 50nC @ 10V | 2775pF @ 20V | 2.4W | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | |
| NTMS5835NLR2G | ON SEMICONDUCTOR | MOSFET N-Channel, Metal Oxide | 40V | 9.2A (Ta) | 10 mOhm @ 10A, 10V | 3V @ 250µA | 50nC @ 10V | 2115pF @ 20V | 1.5W | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | |
| NTMD5836NLR2G | ON SEMICONDUCTOR | 2 N-Channel (Dual) | 40V | 9A, 5.7A | 12 mOhm @ 10A, 10V | 3V @ 250µA | 50nC @ 10V | 2120pF @ 20V | 1.5W | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | |
| FDD4141_F085 | FAIRCHILD SEMICONDUCTOR CORP | MOSFET P-Channel, Metal Oxide | 40V | 10.8A (Ta), 50A (Tc) | 12.3 mOhm @ 12.7A, 10V | 3V @ 250µA | 50nC @ 10V | 2775pF @ 20V | 2.4W | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | |
| NDS9430A | FAIRCHILD SEMICONDUCTOR CORP | MOSFET P-Channel, Metal Oxide | 20V | 5.3A (Ta) | 50 mOhm @ 5.3A, 10V | 3V @ 250µA | 50nC @ 10V | 950pF @ 15V | 1W | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | |
| PMK30EP,518 | NXP SEMICONDUCTORS | MOSFET P-Channel, Metal Oxide | 30V | 14.9A | 19 mOhm @ 9.2A, 10V | 3V @ 250µA | 50nC @ 10V | 2240pF @ 25V | 6.9W | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | |
| SI4420BDY-T1-GE3 | VISHAY SILICONIX | MOSFET N-Channel, Metal Oxide | 30V | 9.5A (Ta) | 8.5 mOhm @ 13.5A, 10V | 3V @ 250µA | 50nC @ 10V | - | 1.4W | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | |
| SI7619DN-T1-GE3 | VISHAY SILICONIX | MOSFET P-Channel, Metal Oxide | 30V | 24A (Tc) | 21 mOhm @ 10.5A, 10V | 3V @ 250µA | 50nC @ 10V | 1350pF @ 15V | 27.8W | Surface Mount | PowerPAK® 1212-8 | |
| SI4435DDY-T1-E3 | VISHAY SILICONIX | MOSFET P-Channel, Metal Oxide | 30V | 8.1A (Ta), 11.4A (Tc) | 24 mOhm @ 9.1A, 10V | 3V @ 250µA | 50nC @ 10V | 1350pF @ 15V | 5W | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | |
| SI4435DDY-T1-GE3 | VISHAY SILICONIX | MOSFET P-Channel, Metal Oxide | 30V | 8.1A (Ta), 11.4A (Tc) | 24 mOhm @ 9.1A, 10V | 3V @ 250µA | 50nC @ 10V | 1350pF @ 15V | 5W | Surface Mount | 8-SOIC (0.154", 3.90mm Width) |
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