Specification
FET Type MOSFET P-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 14.9A
Rds On (Max) @ Id, Vgs 19 mOhm @ 9.2A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA
Gate Charge (Qg) @ Vgs 50nC @ 10V
Input Capacitance (Ciss) @ Vds 2240pF @ 25V
Power - Max 6.9W
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154", 3.90mm Width)