2.2V @ 250µA,Vgs(th) (Max) @ Id
40nC @ 10V,Gate Charge (Qg) @ Vgs
7 parts found
Part Numbers Manufacturer Name Datasheet FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) @ Vgs Input Capacitance (Ciss) @ Vds Power - Max Mounting Type Package / Case
NTD6416ANLT4G ON SEMICONDUCTOR
MOSFET N-Channel, Metal Oxide 100V 19A (Tc) 74 mOhm @ 19A, 10V 2.2V @ 250µA 40nC @ 10V 1000pF @ 25V 71W Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63
AON7508 ALPHA & OMEGA SEMICONDUCTOR LTD
MOSFET N-Channel, Metal Oxide 30V 26A (Ta), 32A (Tc) 3 mOhm @ 20A, 10V 2.2V @ 250µA 40nC @ 10V 1835pF @ 15V 3.1W Surface Mount 8-PowerVDFN
AON7532E ALPHA & OMEGA SEMICONDUCTOR LTD
MOSFET N-Channel, Metal Oxide 30V 30.5A (Ta), 28A (Tc) 3.5 mOhm @ 20A, 10V 2.2V @ 250µA 40nC @ 10V 1950pF @ 15V 5W Surface Mount 8-WDFN Exposed Pad
AON7764 ALPHA & OMEGA SEMICONDUCTOR LTD
MOSFET N-Channel, Metal Oxide 30V 30A (Ta), 32A (Tc) 3.2 mOhm @ 20A, 10V 2.2V @ 250µA 40nC @ 10V 1990pF @ 15V 4.2W Surface Mount 8-VDFN Exposed Pad
NTD6416ANL-1G ON SEMICONDUCTOR
MOSFET N-Channel, Metal Oxide 100V 19A (Tc) 74 mOhm @ 19A, 10V 2.2V @ 250µA 40nC @ 10V 1000pF @ 25V 71W Through Hole TO-251-3 Short Leads, IPak, TO-251AA
SIS434DN-T1-GE3 VISHAY SILICONIX
MOSFET N-Channel, Metal Oxide 40V 17.6A (Ta), 35A (Tc) 7.6 mOhm @ 16.2A, 10V 2.2V @ 250µA 40nC @ 10V 1530pF @ 20V 52W Surface Mount PowerPAK® 1212-8
SIZ910DT-T1-GE3 VISHAY SILICONIX
2 N-Channel (Dual) Asymmetrical 30V 22A, 32A 5.8 mOhm @ 20A, 10V 2.2V @ 250µA 40nC @ 10V 1500pF @ 15V 4.6W, 5.2W Surface Mount 8-PowerWDFN