Specification
FET Type MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 30.5A (Ta), 28A (Tc)
Rds On (Max) @ Id, Vgs 3.5 mOhm @ 20A, 10V
Vgs(th) (Max) @ Id 2.2V @ 250µA
Gate Charge (Qg) @ Vgs 40nC @ 10V
Input Capacitance (Ciss) @ Vds 1950pF @ 15V
Power - Max 5W
Mounting Type Surface Mount
Package / Case 8-WDFN Exposed Pad