| Part Numbers | Manufacturer Name | Datasheet | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) @ Vgs | Input Capacitance (Ciss) @ Vds | Power - Max | Mounting Type | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| IPB090N06N3 G | INFINEON TECHNOLOGIES AG | MOSFET N-Channel, Metal Oxide | 60V | 50A | 9 mOhm @ 50A, 10V | 4V @ 34µA | 36nC @ 10V | 2900pF @ 30V | 71W | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | |
| IPD50N04S3-09 | INFINEON TECHNOLOGIES AG | MOSFET N-Channel, Metal Oxide | 40V | 50A (Tc) | 9 mOhm @ 50A, 10V | 4V @ 28µA | 26nC @ 10V | 1750pF @ 25V | 63W | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | |
| IPD50N06S4-09 | INFINEON TECHNOLOGIES AG | MOSFET N-Channel, Metal Oxide | 60V | 50A (Tc) | 9 mOhm @ 50A, 10V | 4V @ 34µA | 47nC @ 10V | 3785pF @ 25V | 71W | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | |
| IRLH5030TRPBF | INTERNATIONAL RECTIFIER CORP | MOSFET N-Channel, Metal Oxide | 100V | 13A (Ta), 100A (Tc) | 9 mOhm @ 50A, 10V | 2.5V @ 150µA | 94nC @ 10V | 5185pF @ 50V | 3.6W | Surface Mount | 8-PowerVQFN | |
| IRFH5010TRPBF | INTERNATIONAL RECTIFIER CORP | MOSFET N-Channel, Metal Oxide | 100V | 13A (Ta), 100A (Tc) | 9 mOhm @ 50A, 10V | 4V @ 150µA | 98nC @ 10V | 4340pF @ 25V | 3.6W | Surface Mount | 8-PowerVQFN | |
| IRLH5030TR2PBF | INTERNATIONAL RECTIFIER CORP | MOSFET N-Channel, Metal Oxide | 100V | 13A (Ta), 100A (Tc) | 9 mOhm @ 50A, 10V | 2.5V @ 150µA | 94nC @ 10V | 5185pF @ 50V | 3.6W | Surface Mount | 8-PowerVQFN | |
| IRFH5010TR2PBF | INTERNATIONAL RECTIFIER CORP | MOSFET N-Channel, Metal Oxide | 100V | 13A (Ta), 100A (Tc) | 9 mOhm @ 50A, 10V | 4V @ 150µA | 98nC @ 10V | 4340pF @ 25V | 3.6W | Surface Mount | 8-PowerVQFN | |
| APT10M09B2VFRG | MICROSEMI POWER PRODUCTS GROUP | MOSFET N-Channel, Metal Oxide | 100V | 100A (Tc) | 9 mOhm @ 50A, 10V | 4V @ 2.5mA | 350nC @ 10V | 9875pF @ 25V | 625W | Through Hole | TO-247-3 Variant | |
| BUK7909-75AIE,127 | NXP SEMICONDUCTORS | MOSFET N-Channel, Metal Oxide | 75V | 75A | 9 mOhm @ 50A, 10V | 4V @ 1mA | 121nC @ 10V | 4700pF @ 25V | 272W | Through Hole | TO-220-5 | |
| BUK7909-75ATE,127 | NXP SEMICONDUCTORS | MOSFET N-Channel, Metal Oxide | 75V | 75A | 9 mOhm @ 50A, 10V | 4V @ 1mA | 121nC @ 10V | 4700pF @ 25V | 272W | Through Hole | TO-220-5 |
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