Transistor: N-MOSFET; unipolar; 100V; 13A; 3.6W; P
Specification
FET Type MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) @ 25°C 13A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs 9 mOhm @ 50A, 10V
Vgs(th) (Max) @ Id 2.5V @ 150µA
Gate Charge (Qg) @ Vgs 94nC @ 10V
Input Capacitance (Ciss) @ Vds 5185pF @ 50V
Power - Max 3.6W
Mounting Type Surface Mount
Package / Case 8-PowerVQFN