8.9 mOhm @ 25A, 10V,Rds On (Max) @ Id, Vgs
6 parts found
Part Numbers Manufacturer Name Datasheet FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) @ Vgs Input Capacitance (Ciss) @ Vds Power - Max Mounting Type Package / Case
IRLR8729TRPBF INTERNATIONAL RECTIFIER CORP
MOSFET N-Channel, Metal Oxide 30V 58A (Tc) 8.9 mOhm @ 25A, 10V 2.35V @ 25µA 16nC @ 4.5V 1350pF @ 15V 55W Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63
IRLR8729PBF INTERNATIONAL RECTIFIER CORP
MOSFET N-Channel, Metal Oxide 30V 58A (Tc) 8.9 mOhm @ 25A, 10V 2.35V @ 25µA 16nC @ 4.5V 1350pF @ 15V 55W Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63
IRLU8729PBF INTERNATIONAL RECTIFIER CORP
MOSFET N-Channel, Metal Oxide 30V 58A (Tc) 8.9 mOhm @ 25A, 10V 2.35V @ 25µA 16nC @ 4.5V 1350pF @ 15V 55W Through Hole TO-251-3 Short Leads, IPak, TO-251AA
IRLR8729TRLPBF INTERNATIONAL RECTIFIER CORP
MOSFET N-Channel, Metal Oxide 30V 58A (Tc) 8.9 mOhm @ 25A, 10V 2.35V @ 25µA 16nC @ 4.5V 1350pF @ 15V 55W Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63
BUK969R3-100E,118 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 100V 100A (Ta) 8.9 mOhm @ 25A, 10V 2.1V @ 1mA 94.3nC @ 5V 11650pF @ 25V 263W Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
PHK18NQ03LT,518 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 30V 20.3A (Ta) 8.9 mOhm @ 25A, 10V 2.15V @ 1mA 10.6nC @ 4.5V 1380pF @ 12V 6.25W Surface Mount 8-SOIC (0.154", 3.90mm Width)