Specification
FET Type MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 20.3A (Ta)
Rds On (Max) @ Id, Vgs 8.9 mOhm @ 25A, 10V
Vgs(th) (Max) @ Id 2.15V @ 1mA
Gate Charge (Qg) @ Vgs 10.6nC @ 4.5V
Input Capacitance (Ciss) @ Vds 1380pF @ 12V
Power - Max 6.25W
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154", 3.90mm Width)