| Part Numbers | Manufacturer Name | Datasheet | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) @ Vgs | Input Capacitance (Ciss) @ Vds | Power - Max | Mounting Type | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| FDPC8014S | FAIRCHILD SEMICONDUCTOR CORP | 2 N-Channel (Dual) Asymmetrical | 25V | 20A (Ta), 41A (Ta) | 3.8 mOhm @ 20A, 10V | 2.5V @ 250µA | 35nC @ 10V | 2375pF @ 13V | 2.1W, 2.3W | - | - | |
| FDPC8016S | FAIRCHILD SEMICONDUCTOR CORP | 2 N-Channel (Dual) Asymmetrical | 25V | 20A (Ta), 35A (Ta) | 3.8 mOhm @ 20A, 10V | 2.5V @ 250µA | 35nC @ 10V | 2375pF @ 13V | 2.1W, 2.3W | - | - | |
| AON6922 | ALPHA & OMEGA SEMICONDUCTOR LTD | 2 N-Channel (Dual) Asymmetrical | 25V | 18A, 31A | 3.8 mOhm @ 20A, 10V | 1.7V @ 250µA | 32nC @ 10V | 2340pF @ 12.5V | 2W, 2.2W | Surface Mount | 8-WDFN Exposed Pad | |
| IRFHM830TRPBF | INTERNATIONAL RECTIFIER CORP | MOSFET N-Channel, Metal Oxide | 30V | 21A (Ta), 40A (Tc) | 3.8 mOhm @ 20A, 10V | 2.35V @ 50µA | 31nC @ 10V | 2155pF @ 25V | 2.7W | Surface Mount | 8-VQFN Exposed Pad | |
| IRFHM830TR2PBF | INTERNATIONAL RECTIFIER CORP | MOSFET N-Channel, Metal Oxide | 30V | 21A (Ta), 40A (Tc) | 3.8 mOhm @ 20A, 10V | 2.35V @ 50µA | 31nC @ 10V | 2155pF @ 25V | 2.7W | Surface Mount | 8-VQFN Exposed Pad | |
| IRF7832Z | INTERNATIONAL RECTIFIER CORP | MOSFET N-Channel, Metal Oxide | 30V | 21A (Ta) | 3.8 mOhm @ 20A, 10V | 2.35V @ 250µA | 45nC @ 4.5V | 3860pF @ 15V | 2.5W | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | |
| IRF7832ZTR | INTERNATIONAL RECTIFIER CORP | MOSFET N-Channel, Metal Oxide | 30V | 21A (Ta) | 3.8 mOhm @ 20A, 10V | 2.35V @ 250µA | 45nC @ 4.5V | 3860pF @ 15V | 2.5W | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | |
| RJK03N6DPA-00#J5A | RENESAS ELECTRONICS CORP | MOSFET N-Channel, Metal Oxide | 30V | 40A | 3.8 mOhm @ 20A, 10V | - | 19nC @ 4.5V | 3220pF @ 10V | 35W | Surface Mount | 8-WFDFN Exposed Pad | |
| SI7623DN-T1-GE3 | VISHAY SILICONIX | MOSFET P-Channel, Metal Oxide | 20V | 22.6A (Ta), 35A (Tc) | 3.8 mOhm @ 20A, 10V | 1.5V @ 250µA | 180nC @ 10V | 5460pF @ 10V | 52W | Surface Mount | PowerPAK® 1212-8 | |
| SIR646DP-T1-GE3 | VISHAY SILICONIX | MOSFET N-Channel, Metal Oxide | 40V | 27A (Ta) | 3.8 mOhm @ 20A, 10V | 2.2V @ 250µA | 51nC @ 10V | 2230pF @ 20V | 5W | Surface Mount | PowerPAK® SO-8 |
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