Specification
FET Type 2 N-Channel (Dual) Asymmetrical
Drain to Source Voltage (Vdss) 25V
Current - Continuous Drain (Id) @ 25°C 18A, 31A
Rds On (Max) @ Id, Vgs 3.8 mOhm @ 20A, 10V
Vgs(th) (Max) @ Id 1.7V @ 250µA
Gate Charge (Qg) @ Vgs 32nC @ 10V
Input Capacitance (Ciss) @ Vds 2340pF @ 12.5V
Power - Max 2W, 2.2W
Mounting Type Surface Mount
Package / Case 8-WDFN Exposed Pad