| Part Numbers | Manufacturer Name | Datasheet | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) @ Vgs | Input Capacitance (Ciss) @ Vds | Power - Max | Mounting Type | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| FDB8860_F085 | FAIRCHILD SEMICONDUCTOR CORP | MOSFET N-Channel, Metal Oxide | 30V | 80A (Tc) | 2.3 mOhm @ 80A, 10V | 3V @ 250µA | 214nC @ 10V | 12585pF @ 15V | 254W | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | |
| FDB8860 | FAIRCHILD SEMICONDUCTOR CORP | MOSFET N-Channel, Metal Oxide | 30V | 80A (Tc) | 2.3 mOhm @ 80A, 10V | 3V @ 250µA | 214nC @ 10V | 12585pF @ 15V | 254W | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | |
| IPP120N04S3-02 | INFINEON TECHNOLOGIES AG | MOSFET N-Channel, Metal Oxide | 40V | 120A (Tc) | 2.3 mOhm @ 80A, 10V | 4V @ 230µA | 210nC @ 10V | 14300pF @ 25V | 300W | Through Hole | TO-220-3 | |
| IPI120N04S3-02 | INFINEON TECHNOLOGIES AG | MOSFET N-Channel, Metal Oxide | 40V | 120A (Tc) | 2.3 mOhm @ 80A, 10V | 4V @ 230µA | 210nC @ 10V | 14300pF @ 25V | 300W | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA |
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