MOSFET, N, D2-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:31A; Drain Source Voltage Vds:30V; On Resistance Rds(on):1.6mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.7V; Power Dissipation Pd:254W; Transistor Case Style:TO-263; No. of Pins:3; Operating Temperature Max:
Specification
FET Type MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 80A (Tc)
Rds On (Max) @ Id, Vgs 2.3 mOhm @ 80A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA
Gate Charge (Qg) @ Vgs 214nC @ 10V
Input Capacitance (Ciss) @ Vds 12585pF @ 15V
Power - Max 254W
Mounting Type Surface Mount
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB