| Part Numbers | Manufacturer Name | Datasheet | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) @ Vgs | Input Capacitance (Ciss) @ Vds | Power - Max | Mounting Type | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| DMN3016LFDE-13 | DIODES INC | MOSFET N-Channel, Metal Oxide | 30V | 10A (Ta) | 12 mOhm @ 11A, 10V | 2V @ 250µA | 25.1nC @ 10V | 1415pF @ 15V | 730mW | Surface Mount | 6-UDFN Exposed Pad | |
| DMN3016LFDE-7 | DIODES INC | MOSFET N-Channel, Metal Oxide | 30V | 10A (Ta) | 12 mOhm @ 11A, 10V | 2V @ 250µA | 25.1nC @ 10V | 1415pF @ 15V | 730mW | Surface Mount | 6-UDFN Exposed Pad | |
| AO4444 | ALPHA & OMEGA SEMICONDUCTOR LTD | MOSFET N-Channel, Metal Oxide | 80V | 11A (Ta) | 12 mOhm @ 11A, 10V | 3.8V @ 250µA | 46nC @ 10V | 2865pF @ 40V | 3.1W | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | |
| IRF7467 | INTERNATIONAL RECTIFIER CORP | MOSFET N-Channel, Metal Oxide | 30V | 11A (Ta) | 12 mOhm @ 11A, 10V | 2V @ 250µA | 32nC @ 4.5V | 2530pF @ 15V | 2.5W | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | |
| IRF7467TR | INTERNATIONAL RECTIFIER CORP | MOSFET N-Channel, Metal Oxide | 30V | 11A (Ta) | 12 mOhm @ 11A, 10V | 2V @ 250µA | 32nC @ 4.5V | 2530pF @ 15V | 2.5W | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | |
| IRF7467PBF | INTERNATIONAL RECTIFIER CORP | MOSFET N-Channel, Metal Oxide | 30V | 11A (Ta) | 12 mOhm @ 11A, 10V | 2V @ 250µA | 32nC @ 4.5V | 2530pF @ 15V | 2.5W | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | |
| IRF7467TRPBF | INTERNATIONAL RECTIFIER CORP | MOSFET N-Channel, Metal Oxide | 30V | 11A (Ta) | 12 mOhm @ 11A, 10V | 2V @ 250µA | 32nC @ 4.5V | 2530pF @ 15V | 2.5W | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | |
| SI4890DY-T1-E3 | VISHAY SILICONIX | MOSFET N-Channel, Metal Oxide | 30V | 11A (Ta) | 12 mOhm @ 11A, 10V | 800mV @ 250µA | 20nC @ 5V | - | 2.5W | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | |
| SI4890DY-T1-GE3 | VISHAY SILICONIX | MOSFET N-Channel, Metal Oxide | 30V | 11A (Ta) | 12 mOhm @ 11A, 10V | 800mV @ 250µA | 20nC @ 5V | - | - | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | |
| SI4172DY-T1-GE3 | VISHAY SILICONIX | MOSFET N-Channel, Metal Oxide | 30V | 9A (Ta), 15A (Tc) | 12 mOhm @ 11A, 10V | 2.5V @ 250µA | 23nC @ 10V | 820pF @ 15V | 4.5W | Surface Mount | 8-SOIC (0.154", 3.90mm Width) |
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