Specification
FET Type MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 80V
Current - Continuous Drain (Id) @ 25°C 11A (Ta)
Rds On (Max) @ Id, Vgs 12 mOhm @ 11A, 10V
Vgs(th) (Max) @ Id 3.8V @ 250µA
Gate Charge (Qg) @ Vgs 46nC @ 10V
Input Capacitance (Ciss) @ Vds 2865pF @ 40V
Power - Max 3.1W
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154", 3.90mm Width)