FDMB506P |
FAIRCHILD SEMICONDUCTOR CORP |
|
MOSFET P-Channel, Metal Oxide
|
20V
|
6.8A (Ta)
|
30 mOhm @ 6.8A, 4.5V
|
1.5V @ 250µA
|
30nC @ 4.5V
|
2960pF @ 10V
|
1.9W
|
Surface Mount
|
-
|
IRF7402PBF |
INTERNATIONAL RECTIFIER CORP |
|
MOSFET N-Channel, Metal Oxide
|
20V
|
6.8A (Ta)
|
35 mOhm @ 4.1A, 4.5V
|
700mV @ 250µA
|
22nC @ 4.5V
|
650pF @ 15V
|
2.5W
|
Surface Mount
|
8-SOIC (0.154", 3.90mm Width)
|
IRF7402TR |
INTERNATIONAL RECTIFIER CORP |
|
MOSFET N-Channel, Metal Oxide
|
20V
|
6.8A (Ta)
|
35 mOhm @ 4.1A, 4.5V
|
700mV @ 250µA
|
22nC @ 4.5V
|
650pF @ 15V
|
2.5W
|
Surface Mount
|
8-SOIC (0.154", 3.90mm Width)
|
IRF7402TRPBF |
INTERNATIONAL RECTIFIER CORP |
|
MOSFET N-Channel, Metal Oxide
|
20V
|
6.8A (Ta)
|
35 mOhm @ 4.1A, 4.5V
|
700mV @ 250µA
|
22nC @ 4.5V
|
650pF @ 15V
|
2.5W
|
Surface Mount
|
8-SOIC (0.154", 3.90mm Width)
|
NTQS6463R2 |
ON SEMICONDUCTOR |
|
MOSFET P-Channel, Metal Oxide
|
20V
|
6.8A (Ta)
|
20 mOhm @ 6.8A, 4.5V
|
900mV @ 250µA
|
50nC @ 5V
|
-
|
1.39W
|
Surface Mount
|
8-TSSOP (0.173", 4.40mm Width)
|
SI6466ADQ-T1-E3 |
VISHAY SILICONIX |
|
MOSFET N-Channel, Metal Oxide
|
20V
|
6.8A (Ta)
|
14 mOhm @ 8.1A, 4.5V
|
450mV @ 250µA
|
27nC @ 5V
|
-
|
1.05W
|
Surface Mount
|
8-TSSOP (0.173", 4.40mm Width)
|
SI6466ADQ-T1-GE3 |
VISHAY SILICONIX |
|
MOSFET N-Channel, Metal Oxide
|
20V
|
6.8A (Ta)
|
14 mOhm @ 8.1A, 4.5V
|
450mV @ 250µA
|
27nC @ 5V
|
-
|
1.05W
|
Surface Mount
|
8-TSSOP (0.173", 4.40mm Width)
|