20V,Drain to Source Voltage (Vdss)
6.8A (Ta),Current - Continuous Drain (Id) @ 25°C
7 parts found
Part Numbers Manufacturer Name Datasheet FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) @ Vgs Input Capacitance (Ciss) @ Vds Power - Max Mounting Type Package / Case
FDMB506P FAIRCHILD SEMICONDUCTOR CORP
MOSFET P-Channel, Metal Oxide 20V 6.8A (Ta) 30 mOhm @ 6.8A, 4.5V 1.5V @ 250µA 30nC @ 4.5V 2960pF @ 10V 1.9W Surface Mount -
IRF7402PBF INTERNATIONAL RECTIFIER CORP
MOSFET N-Channel, Metal Oxide 20V 6.8A (Ta) 35 mOhm @ 4.1A, 4.5V 700mV @ 250µA 22nC @ 4.5V 650pF @ 15V 2.5W Surface Mount 8-SOIC (0.154", 3.90mm Width)
IRF7402TR INTERNATIONAL RECTIFIER CORP
MOSFET N-Channel, Metal Oxide 20V 6.8A (Ta) 35 mOhm @ 4.1A, 4.5V 700mV @ 250µA 22nC @ 4.5V 650pF @ 15V 2.5W Surface Mount 8-SOIC (0.154", 3.90mm Width)
IRF7402TRPBF INTERNATIONAL RECTIFIER CORP
MOSFET N-Channel, Metal Oxide 20V 6.8A (Ta) 35 mOhm @ 4.1A, 4.5V 700mV @ 250µA 22nC @ 4.5V 650pF @ 15V 2.5W Surface Mount 8-SOIC (0.154", 3.90mm Width)
NTQS6463R2 ON SEMICONDUCTOR
MOSFET P-Channel, Metal Oxide 20V 6.8A (Ta) 20 mOhm @ 6.8A, 4.5V 900mV @ 250µA 50nC @ 5V - 1.39W Surface Mount 8-TSSOP (0.173", 4.40mm Width)
SI6466ADQ-T1-E3 VISHAY SILICONIX
MOSFET N-Channel, Metal Oxide 20V 6.8A (Ta) 14 mOhm @ 8.1A, 4.5V 450mV @ 250µA 27nC @ 5V - 1.05W Surface Mount 8-TSSOP (0.173", 4.40mm Width)
SI6466ADQ-T1-GE3 VISHAY SILICONIX
MOSFET N-Channel, Metal Oxide 20V 6.8A (Ta) 14 mOhm @ 8.1A, 4.5V 450mV @ 250µA 27nC @ 5V - 1.05W Surface Mount 8-TSSOP (0.173", 4.40mm Width)