Transistor: N-MOSFET; unipolar; 20V; 6.8A; 2.5W; S
Specification
FET Type MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 6.8A (Ta)
Rds On (Max) @ Id, Vgs 35 mOhm @ 4.1A, 4.5V
Vgs(th) (Max) @ Id 700mV @ 250µA
Gate Charge (Qg) @ Vgs 22nC @ 4.5V
Input Capacitance (Ciss) @ Vds 650pF @ 15V
Power - Max 2.5W
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154", 3.90mm Width)