200V,Drain to Source Voltage (Vdss)
50A (Tc),Current - Continuous Drain (Id) @ 25°C
11 parts found
Part Numbers Manufacturer Name Datasheet FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) @ Vgs Input Capacitance (Ciss) @ Vds Power - Max Mounting Type Package / Case
IXTA50N20P IXYS CORP
MOSFET N-Channel, Metal Oxide 200V 50A (Tc) 60 mOhm @ 50A, 10V 5V @ 250µA 70nC @ 10V 2720pF @ 25V 360W Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IXTP50N20P IXYS CORP
MOSFET N-Channel, Metal Oxide 200V 50A (Tc) 60 mOhm @ 50A, 10V 5V @ 250µA 70nC @ 10V 2720pF @ 25V 360W Through Hole TO-220-3
IXTQ50N20P IXYS CORP
MOSFET N-Channel, Metal Oxide 200V 50A (Tc) 60 mOhm @ 50A, 10V 5V @ 250µA 70nC @ 10V 2720pF @ 25V 360W Through Hole TO-3P-3, SC-65-3
IXFT50N20 IXYS CORP
MOSFET N-Channel, Metal Oxide 200V 50A (Tc) 45 mOhm @ 25A, 10V 4V @ 4mA 220nC @ 10V 4400pF @ 25V 300W Surface Mount TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
IRFP260MPBF INTERNATIONAL RECTIFIER CORP
MOSFET N-Channel, Metal Oxide 200V 50A (Tc) 40 mOhm @ 28A, 10V 4V @ 250µA 234nC @ 10V 4057pF @ 25V 300W Through Hole TO-247-3
IRFP260NPBF INTERNATIONAL RECTIFIER CORP
MOSFET N-Channel, Metal Oxide 200V 50A (Tc) 40 mOhm @ 28A, 10V 4V @ 250µA 234nC @ 10V 4057pF @ 25V 300W Through Hole TO-247-3
IXFH50N20 IXYS CORP
MOSFET N-Channel, Metal Oxide 200V 50A (Tc) 45 mOhm @ 25A, 10V 4V @ 4mA 220nC @ 10V 4400pF @ 25V 300W Through Hole TO-247-3
IXTH50N20 IXYS CORP
MOSFET N-Channel, Metal Oxide 200V 50A (Tc) 45 mOhm @ 25A, 10V 4V @ 250µA 220nC @ 10V 4600pF @ 25V 300W Through Hole TO-247-3
IXFR58N20 IXYS CORP
MOSFET N-Channel, Metal Oxide 200V 50A (Tc) 40 mOhm @ 29A, 10V 4V @ 4mA 140nC @ 10V 3600pF @ 25V 300W Through Hole -
PSMN040-200W,127 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 200V 50A (Tc) 40 mOhm @ 25A, 10V 4V @ 1mA 183nC @ 10V 9530pF @ 25V 300W Through Hole TO-247-3