Specification
FET Type MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 200V
Current - Continuous Drain (Id) @ 25°C 50A (Tc)
Rds On (Max) @ Id, Vgs 40 mOhm @ 25A, 10V
Vgs(th) (Max) @ Id 4V @ 1mA
Gate Charge (Qg) @ Vgs 183nC @ 10V
Input Capacitance (Ciss) @ Vds 9530pF @ 25V
Power - Max 300W
Mounting Type Through Hole
Package / Case TO-247-3