MOSFET P-Channel, Metal Oxide,FET Type
30A (Tc),Current - Continuous Drain (Id) @ 25°C
9 parts found
Part Numbers Manufacturer Name Datasheet FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) @ Vgs Input Capacitance (Ciss) @ Vds Power - Max Mounting Type Package / Case
FQPF47P06YDTU FAIRCHILD SEMICONDUCTOR CORP
MOSFET P-Channel, Metal Oxide 60V 30A (Tc) 26 mOhm @ 15A, 10V 4V @ 250µA 110nC @ 10V 3600pF @ 25V 62W Through Hole TO-220-3 Full Pack
NDP6030PL FAIRCHILD SEMICONDUCTOR CORP
MOSFET P-Channel, Metal Oxide 30V 30A (Tc) 25 mOhm @ 19A, 10V 2V @ 250µA 36nC @ 5V 1570pF @ 15V 75W Through Hole TO-220-3
SPD30P06P INFINEON TECHNOLOGIES AG
MOSFET P-Channel, Metal Oxide 60V 30A (Tc) 75 mOhm @ 21.5A, 10V 4V @ 1.7mA 48nC @ 10V 1535pF @ 25V 125W Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63
SPU30P06P INFINEON TECHNOLOGIES AG
MOSFET P-Channel, Metal Oxide 60V 30A (Tc) 75 mOhm @ 21.5A, 10V 4V @ 1.7mA 48nC @ 10V 1535pF @ 25V 125W Through Hole TO-251-3 Long Leads, IPak, TO-251AB
IXTR48P20P IXYS CORP
MOSFET P-Channel, Metal Oxide 200V 30A (Tc) 93 mOhm @ 24A, 10V 4.5V @ 250µA 103nC @ 10V 5400pF @ 25V 190W Through Hole -
MTB30P06VT4G ON SEMICONDUCTOR
MOSFET P-Channel, Metal Oxide 60V 30A (Tc) 80 mOhm @ 15A, 10V 4V @ 250µA 80nC @ 10V 2190pF @ 25V 3W Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
MTB30P06VT4 ON SEMICONDUCTOR
MOSFET P-Channel, Metal Oxide 60V 30A (Tc) 80 mOhm @ 15A, 10V 4V @ 250µA 80nC @ 10V 2190pF @ 25V 3W Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
SQJ461EP-T1-GE3 VISHAY SILICONIX
MOSFET P-Channel, Metal Oxide 60V 30A (Tc) 16 mOhm @ 14.4A, 10V 2.5V @ 250µA 140nC @ 10V 4710pF @ 30V 83W Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63
SQJ463EP-T1-GE3 VISHAY SILICONIX
MOSFET P-Channel, Metal Oxide 40V 30A (Tc) 10 mOhm @ 18A, 10V 2.5V @ 250µA 150nC @ 10V 5875pF @ 20V 83W Surface Mount PowerPAK® SO-8