Specification
FET Type MOSFET P-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 30A (Tc)
Rds On (Max) @ Id, Vgs 25 mOhm @ 19A, 10V
Vgs(th) (Max) @ Id 2V @ 250µA
Gate Charge (Qg) @ Vgs 36nC @ 5V
Input Capacitance (Ciss) @ Vds 1570pF @ 15V
Power - Max 75W
Mounting Type Through Hole
Package / Case TO-220-3