3.8A (Ta),Current - Continuous Drain (Id) @ 25°C
18nC @ 10V,Gate Charge (Qg) @ Vgs
4 parts found
Part Numbers Manufacturer Name Datasheet FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) @ Vgs Input Capacitance (Ciss) @ Vds Power - Max Mounting Type Package / Case
ZXMP7A17KTC DIODES INC
MOSFET P-Channel, Metal Oxide 70V 3.8A (Ta) 160 mOhm @ 2.1A, 10V 1V @ 250µA 18nC @ 10V 635pF @ 40V 2.11W Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63
MMDF3N02HDR2 ON SEMICONDUCTOR
MOSFET P-Channel, Metal Oxide 20V 3.8A (Ta) 90 mOhm @ 3A, 10V 2V @ 250µA 18nC @ 10V 630pF @ 16V 2W Surface Mount 8-SOIC (0.154", 3.90mm Width)
MMDF3N02HDR2G ON SEMICONDUCTOR
MOSFET P-Channel, Metal Oxide 20V 3.8A (Ta) 90 mOhm @ 3A, 10V 2V @ 250µA 18nC @ 10V 630pF @ 16V 2W Surface Mount 8-SOIC (0.154", 3.90mm Width)
SI8465DB-T2-E1 VISHAY SILICONIX
MOSFET P-Channel, Metal Oxide 20V 3.8A (Ta) 104 mOhm @ 1.5A, 4.5V 1.5V @ 250µA 18nC @ 10V 450pF @ 10V 780mW Surface Mount 4-XFBGA, CSPBGA