Specification
FET Type MOSFET P-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 3.8A (Ta)
Rds On (Max) @ Id, Vgs 104 mOhm @ 1.5A, 4.5V
Vgs(th) (Max) @ Id 1.5V @ 250µA
Gate Charge (Qg) @ Vgs 18nC @ 10V
Input Capacitance (Ciss) @ Vds 450pF @ 10V
Power - Max 780mW
Mounting Type Surface Mount
Package / Case 4-XFBGA, CSPBGA