| Part Numbers | Manufacturer Name | Datasheet | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) @ Vgs | Input Capacitance (Ciss) @ Vds | Power - Max | Mounting Type | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| FQU2N60CTU | FAIRCHILD SEMICONDUCTOR CORP | MOSFET N-Channel, Metal Oxide | 600V | 1.9A (Tc) | 4.7 Ohm @ 950mA, 10V | 4V @ 250µA | 12nC @ 10V | 235pF @ 25V | 2.5W | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | |
| IRFU9210PBF | VISHAY SILICONIX | MOSFET P-Channel, Metal Oxide | 200V | 1.9A (Tc) | 3 Ohm @ 1.1A, 10V | 4V @ 250µA | 8.9nC @ 10V | 170pF @ 25V | 2.5W | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | |
| IRFU9210 | VISHAY SILICONIX | MOSFET P-Channel, Metal Oxide | 200V | 1.9A (Tc) | 3 Ohm @ 1.1A, 10V | 4V @ 250µA | 8.9nC @ 10V | 170pF @ 25V | 2.5W | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA |
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