Specification
FET Type MOSFET P-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 200V
Current - Continuous Drain (Id) @ 25°C 1.9A (Tc)
Rds On (Max) @ Id, Vgs 3 Ohm @ 1.1A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) @ Vgs 8.9nC @ 10V
Input Capacitance (Ciss) @ Vds 170pF @ 25V
Power - Max 2.5W
Mounting Type Through Hole
Package / Case TO-251-3 Short Leads, IPak, TO-251AA