40V,Drain to Source Voltage (Vdss)
120nC @ 10V,Gate Charge (Qg) @ Vgs
8 parts found
Part Numbers Manufacturer Name Datasheet FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) @ Vgs Input Capacitance (Ciss) @ Vds Power - Max Mounting Type Package / Case
IPB020N04N G INFINEON TECHNOLOGIES AG
MOSFET N-Channel, Metal Oxide 40V 140A 2 mOhm @ 100A, 10V 4V @ 95µA 120nC @ 10V 9700pF @ 20V 167W Surface Mount TO-263-7, D²Pak (6 Leads + Tab), TO-263CB
IPP023N04N G INFINEON TECHNOLOGIES AG
MOSFET N-Channel, Metal Oxide 40V 90A (Tc) 2.3 mOhm @ 90A, 10V 4V @ 95µA 120nC @ 10V 10000pF @ 20V 167W Through Hole TO-220-3
IPB023N04N G INFINEON TECHNOLOGIES AG
MOSFET N-Channel, Metal Oxide 40V 90A 2.3 mOhm @ 90A, 10V 4V @ 95µA 120nC @ 10V 10000pF @ 20V 167W Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
BUK7C06-40AITE,118 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 40V 75A 6 mOhm @ 50A, 10V 4V @ 1mA 120nC @ 10V 4300pF @ 25V 272W Surface Mount TO-263-7, D²Pak (6 Leads + Tab), TO-263CB
NP90N04NUK-S18-AY RENESAS ELECTRONICS CORP
MOSFET N-Channel, Metal Oxide 40V 90A 2.8 mOhm @ 45A, 10V 4V @ 250µA 120nC @ 10V 7050pF @ 25V 1.8W Through Hole TO-262-3 Full Pack, I²Pak
NP90N04MUK-S18-AY RENESAS ELECTRONICS CORP
MOSFET N-Channel, Metal Oxide 40V 90A 2.8 mOhm @ 45A, 10V 4V @ 250µA 120nC @ 10V 7050pF @ 25V 1.8W Through Hole TO-220-3 Full Pack
NP100N04PUK-E1-AY RENESAS ELECTRONICS CORP
MOSFET N-Channel, Metal Oxide 40V 100A 2.3 mOhm @ 50A, 10V - 120nC @ 10V 7050pF @ 25V 1.8W Surface Mount TO-263-4, D²Pak (3 Leads + Tab), TO-263AA
SQJ412EP-T1-GE3 VISHAY SILICONIX
MOSFET N-Channel, Metal Oxide 40V 32A (Tc) 4.5 mOhm @ 10.3A, 10V 2.5V @ 250µA 120nC @ 10V 5950pF @ 20V 83W Surface Mount PowerPAK® SO-8