IPB020N04N G |
INFINEON TECHNOLOGIES AG |
|
MOSFET N-Channel, Metal Oxide
|
40V
|
140A
|
2 mOhm @ 100A, 10V
|
4V @ 95µA
|
120nC @ 10V
|
9700pF @ 20V
|
167W
|
Surface Mount
|
TO-263-7, D²Pak (6 Leads + Tab), TO-263CB
|
IPP023N04N G |
INFINEON TECHNOLOGIES AG |
|
MOSFET N-Channel, Metal Oxide
|
40V
|
90A (Tc)
|
2.3 mOhm @ 90A, 10V
|
4V @ 95µA
|
120nC @ 10V
|
10000pF @ 20V
|
167W
|
Through Hole
|
TO-220-3
|
IPB023N04N G |
INFINEON TECHNOLOGIES AG |
|
MOSFET N-Channel, Metal Oxide
|
40V
|
90A
|
2.3 mOhm @ 90A, 10V
|
4V @ 95µA
|
120nC @ 10V
|
10000pF @ 20V
|
167W
|
Surface Mount
|
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
|
BUK7C06-40AITE,118 |
NXP SEMICONDUCTORS |
|
MOSFET N-Channel, Metal Oxide
|
40V
|
75A
|
6 mOhm @ 50A, 10V
|
4V @ 1mA
|
120nC @ 10V
|
4300pF @ 25V
|
272W
|
Surface Mount
|
TO-263-7, D²Pak (6 Leads + Tab), TO-263CB
|
NP90N04NUK-S18-AY |
RENESAS ELECTRONICS CORP |
|
MOSFET N-Channel, Metal Oxide
|
40V
|
90A
|
2.8 mOhm @ 45A, 10V
|
4V @ 250µA
|
120nC @ 10V
|
7050pF @ 25V
|
1.8W
|
Through Hole
|
TO-262-3 Full Pack, I²Pak
|
NP90N04MUK-S18-AY |
RENESAS ELECTRONICS CORP |
|
MOSFET N-Channel, Metal Oxide
|
40V
|
90A
|
2.8 mOhm @ 45A, 10V
|
4V @ 250µA
|
120nC @ 10V
|
7050pF @ 25V
|
1.8W
|
Through Hole
|
TO-220-3 Full Pack
|
NP100N04PUK-E1-AY |
RENESAS ELECTRONICS CORP |
|
MOSFET N-Channel, Metal Oxide
|
40V
|
100A
|
2.3 mOhm @ 50A, 10V
|
-
|
120nC @ 10V
|
7050pF @ 25V
|
1.8W
|
Surface Mount
|
TO-263-4, D²Pak (3 Leads + Tab), TO-263AA
|
SQJ412EP-T1-GE3 |
VISHAY SILICONIX |
|
MOSFET N-Channel, Metal Oxide
|
40V
|
32A (Tc)
|
4.5 mOhm @ 10.3A, 10V
|
2.5V @ 250µA
|
120nC @ 10V
|
5950pF @ 20V
|
83W
|
Surface Mount
|
PowerPAK® SO-8
|