Specification
FET Type MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 40V
Current - Continuous Drain (Id) @ 25°C 90A
Rds On (Max) @ Id, Vgs 2.3 mOhm @ 90A, 10V
Vgs(th) (Max) @ Id 4V @ 95µA
Gate Charge (Qg) @ Vgs 120nC @ 10V
Input Capacitance (Ciss) @ Vds 10000pF @ 20V
Power - Max 167W
Mounting Type Surface Mount
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB