200V,Drain to Source Voltage (Vdss)
1.5W,Power - Max
8 parts found
Part Numbers Manufacturer Name Datasheet FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) @ Vgs Input Capacitance (Ciss) @ Vds Power - Max Mounting Type Package / Case
BSP220,115 NXP SEMICONDUCTORS
MOSFET P-Channel, Metal Oxide 200V 225mA (Ta) 12 Ohm @ 200mA, 10V 2.8V @ 1mA - 90pF @ 25V 1.5W Surface Mount TO-261-4, TO-261AA
BSP122,115 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 200V 550mA 2.5 Ohm @ 750mA, 10V 2V @ 1mA - 100pF @ 25V 1.5W Surface Mount TO-261-4, TO-261AA
SI7820DN-T1-GE3 VISHAY SILICONIX
MOSFET N-Channel, Metal Oxide 200V 1.7A (Ta) 240 mOhm @ 2.6A, 10V 4V @ 250µA 18nC @ 10V - 1.5W Surface Mount PowerPAK® 1212-8
SI4464DY-T1-GE3 VISHAY SILICONIX
MOSFET N-Channel, Metal Oxide 200V 1.7A (Ta) 240 mOhm @ 2.2A, 10V 4V @ 250µA 18nC @ 10V - 1.5W Surface Mount 8-SOIC (0.154", 3.90mm Width)
SI4418DY-T1-E3 VISHAY SILICONIX
MOSFET N-Channel, Metal Oxide 200V 2.3A (Ta) 130 mOhm @ 3A, 10V 4V @ 250µA 30nC @ 10V - 1.5W Surface Mount 8-SOIC (0.154", 3.90mm Width)
SI4418DY-T1-GE3 VISHAY SILICONIX
MOSFET N-Channel, Metal Oxide 200V 2.3A (Ta) 130 mOhm @ 3A, 10V 4V @ 250µA 30nC @ 10V - 1.5W Surface Mount 8-SOIC (0.154", 3.90mm Width)
SI4464DY-T1-E3 VISHAY SILICONIX
MOSFET N-Channel, Metal Oxide 200V 1.7A (Ta) 240 mOhm @ 2.2A, 10V 4V @ 250µA 18nC @ 10V - 1.5W Surface Mount 8-SOIC (0.154", 3.90mm Width)
SI7820DN-T1-E3 VISHAY SILICONIX
MOSFET N-Channel, Metal Oxide 200V 1.7A (Ta) 240 mOhm @ 2.6A, 10V 4V @ 250µA 18nC @ 10V - 1.5W Surface Mount PowerPAK® 1212-8