150V,Drain to Source Voltage (Vdss)
120nC @ 10V,Gate Charge (Qg) @ Vgs
7 parts found
Part Numbers Manufacturer Name Datasheet FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) @ Vgs Input Capacitance (Ciss) @ Vds Power - Max Mounting Type Package / Case
FDH055N15A FAIRCHILD SEMICONDUCTOR CORP
MOSFET N-Channel, Metal Oxide 150V 158A (Tc) 5.9 mOhm @ 120A, 10V 4V @ 250µA 120nC @ 10V 9445pF @ 75V 429W Through Hole TO-247-3
IRFB4115PBF INTERNATIONAL RECTIFIER CORP
MOSFET N-Channel, Metal Oxide 150V 104A (Tc) 11 mOhm @ 62A, 10V 5V @ 250µA 120nC @ 10V 5270pF @ 50V 380W Through Hole TO-220-3
IRFS4115PBF INTERNATIONAL RECTIFIER CORP
MOSFET N-Channel, Metal Oxide 150V 195A (Tc) 12.1 mOhm @ 62A, 10V 5V @ 250µA 120nC @ 10V 5270pF @ 50V 375W Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IRFB4115GPBF INTERNATIONAL RECTIFIER CORP
MOSFET N-Channel, Metal Oxide 150V 104A (Tc) 11 mOhm @ 62A, 10V 5V @ 250µA 120nC @ 10V 5270pF @ 50V 380W Through Hole TO-220-3
IRFSL4115PBF INTERNATIONAL RECTIFIER CORP
MOSFET N-Channel, Metal Oxide 150V 195A (Tc) 12.1 mOhm @ 62A, 10V 5V @ 250µA 120nC @ 10V 5270pF @ 50V 375W Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA
IRFS4115TRLPBF INTERNATIONAL RECTIFIER CORP
MOSFET N-Channel, Metal Oxide 150V 195A (Tc) 12.1 mOhm @ 62A, 10V 5V @ 250µA 120nC @ 10V 5270pF @ 50V 375W Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
SQM85N15-19-GE3 VISHAY SILICONIX
MOSFET N-Channel, Metal Oxide 150V 85A (Tc) 19 mOhm @ 30A, 10V 3.5V @ 250µA 120nC @ 10V 6285pF @ 25V 375W Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB