Transistor: N-MOSFET; unipolar; HEXFET; 150V; 99A;
Specification
FET Type MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 150V
Current - Continuous Drain (Id) @ 25°C 195A (Tc)
Rds On (Max) @ Id, Vgs 12.1 mOhm @ 62A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA
Gate Charge (Qg) @ Vgs 120nC @ 10V
Input Capacitance (Ciss) @ Vds 5270pF @ 50V
Power - Max 375W
Mounting Type Surface Mount
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB